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integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 1 rev. b 04/14/05 is41lv16100b issi ? copyright ? 2005 integrated silicon solution, inc. all rights reserved. issi reserves the right to make changes to this speci fication and its products at any time without notice. issi assumes no liability arising out of the application or use of any information, products or services desc ribed herein. customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders fo r products. features ? ttl compatible inputs and outputs; tristate i/o refresh interval: ? auto refresh mode : 1,024 cycles /16 ms ? ras -only, cas -before- ras (cbr), and hidden jedec standard pinout single power supply: 3.3v 10% byte write and byte read operation via two cas industrial temperature range: -40 o c to +85 o c lead-free available description the issi is41lv16100b is 1,048,576 x 16-bit high-perfor- mance cmos dynamic random access memories. these devices offer an accelerated cycle access called edo page mode. edo page mode allows 1,024 random ac- cesses within a single row with access cycle time as short as 20 ns per 16-bit word. these features make the is41lv16100b ideally suited for high-bandwidth graphics, digital signal processing, high- performance computing systems, and peripheral applications. the is41lv16100b is packaged in a 42-pi n 400-mil soj and 400-mil 50- (44-) pin tsop (type ii). 1m x 16 (16-mbit) dynamic ram with edo page mode key timing parameters parameter -50 -60 unit max. ras access time (t rac ) 5060ns max. cas access time (t cac ) 1415ns max. column address access time (t aa )2530ns min. edo page mode cycle time (t pc )3040ns min. read/write cycle time (t rc ) 85 110 ns pin configurations 50(44)-pin tsop (type ii) 42-pin soj 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 vdd i/o0 i/o1 i/o2 i/o3 vdd i/o4 i/o5 i/o6 i/o7 nc nc we ras nc nc a0 a1 a2 a3 vdd gnd i/o15 i/o14 i/o13 i/o12 gnd i/o11 i/o10 i/o9 i/o8 nc lcas uca s oe a9 a8 a7 a6 a5 a4 gnd pin descriptions a0-a9 address inputs i/o0-15 data inputs/outputs we write enable oe output enable ras row address strobe ucas upper column address strobe lcas lower column address strobe v dd power gnd ground nc no connection april 2005 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 vdd i/o0 i/o1 i/o2 i/o3 vdd i/o4 i/o5 i/o6 i/o7 nc nc nc we ras nc nc a0 a1 a2 a3 vdd gnd i/o15 i/o14 i/o13 i/o12 gnd i/o11 i/o10 i/o9 i/o8 nc nc lcas ucas oe a9 a8 a7 a6 a5 a4 gnd
is41lv16100b 2 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. b 04/13/05 issi ? functional block diagram o e we l cas ucas cas we oe data i/o bus column decoders sense amplifiers memory array 1,048,576 x 16 row decoder data i/o buffers cas clock generator we control logics oe control logic i/o0-i/o15 ras ras a0-a9 ras clock generator refresh counter address buffers
is41lv16100b integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 3 rev. b 04/13/05 issi ? truth table function ras ras ras ras ras lcas lcas lcas lcas lcas ucas ucas ucas ucas ucas we we we we we oe oe oe oe oe address t r /t c i/o standby h h h x x x high-z read: word l l l h l row/col d out read: lower byte l l h h l row/col lower byte, d out upper byte, high-z read: upper byte l h l h l row/col lower byte, high-z upper byte, d out write: word (early write) l l l l x row/col d in write: lower byte (early write) l l h l x row/col lower byte, d in upper byte, high-z write: upper byte (early write) l h l l x row/col lower byte, high-z upper byte, d in read-write (1,2) lllh ll h row/col d out , d in edo page-mode read (2) 1st cycle: l h lh l h l row/col d out 2nd cycle: l h lh l h l na/col d out any cycle: l l hl h h l na/na d out edo page-mode write (1) 1st cycle: l h lh l l x row/col d in 2nd cycle: l h lh l l x na/col d in edo page-mode (1,2) 1st cycle: l h lh lh ll h row/col d out , d in read-write 2nd cycle: l h lh lh ll h na/col d out , d in hidden refresh read (2) l h l l l h l row/col d out write (1,3) l h l l l l x row/col d out ras -only refresh l h h x x row/na high-z cbr refresh (4) h l l l x x x high-z notes: 1. these write cycles may also be byte write cycles (either lcas or ucas active). 2. these read cycles may also be byte read cycles (either lcas or ucas active). 3. early write only. 4. at least one of the two cas signals must be active ( lcas or ucas ).
is41lv16100b 4 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. b 04/13/05 issi ? functional description the is41lv16100b is a cmos dram optimized for high- speed bandwidth, low power applications. during read or write cycles, each bit is uniquely addressed through the 16 address bits. these are entered ten bits (a0-a9) at time. the row address is latched by the row address strobe ( ras ). the column address is latched by the column address strobe ( cas ). ras is used to latch the first nine bits and cas is used to latch the latter nine bits. the is41lv16100b has two cas controls, lcas and ucas . the lcas and ucas inputs internally generates a cas signal functioning in an identical manner to the single cas input on the other 1m x 16 drams. the key difference is that each cas controls its corresponding i/o tristate logic ( in conjunction with oe and we and ras ). lcas controls i/o0 through i/o7 and ucas controls i/o8 through i/o15. the is41lv16100b cas function is determined by the first cas ( lcas or ucas ) transitioning low and the last transitioning back high. the two cas controls give the is41lv16100b both byte read and byte write cycle capabilities. memory cycle a memory cycle is initiated by bring ras low and it is terminated by returning both ras and cas high. to ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum t ras time has expired. a new cycle must not be initiated until the minimum precharge time t rp , t cp has elapsed. read cycle a read cycle is initiated by the falling edge of cas or oe , whichever occurs last, while holding we high. the column address must be held for a minimum time specified by t ar . data out becomes valid only when t rac , t aa , t cac and t oea are all satisfied. as a result, the access time is dependent on the timing relationships between these parameters. write cycle a write cycle is initiated by the falling edge of cas and we , whichever occurs last. the input data must be valid at or before the falling edge of cas or we , whichever occurs first. auto refresh cycle to retain data, 1,024 refresh cycles are required in each 16 ms period. there are two ways to refresh the memory. 1. by clocking each of the 1,024 row addresses (a0 through a9) with ras at least once every 128 ms. any read, write, read- modify-write or ras -only cycle refreshes the addressed row. 2. using a cas -before- ras refresh cycle. cas -before- ras refresh is activated by the falling edge of ras , while holding cas low. in cas -before- ras refresh cycle, an internal 9-bit counter provides the row ad- dresses and the external address inputs are ignored. cas -before- ras is a refresh-only mode and no data access or device selection is allowed. thus, the output remains in the high-z state during the cycle. extended data out page mode edo page mode operation permits all 1,024 columns within a selected row to be randomly accessed at a high data rate. in edo page mode read cycle, the data-out is held to the next cas cycle?s falling edge, instead of the rising edge. for this reason, the valid data output time in edo page mode is extended compared with the fast page mode. in the fast page mode, the valid data output time becomes shorter as the cas cycle time becomes shorter. there- fore, in edo page mode, the timing margin in read cycle is larger than that of the fast page mode even if the cas cycle time becomes shorter. in edo page mode, due to the extended data function, the cas cycle time can be shorter than in the fast page mode if the timing margin is the same. the edo page mode allows both read and write opera- tions during one ras cycle, but the performance is equivalent to that of the fast page mode in that case. power-on after application of the v dd supply, an initial pause of 200 s is required followed by a minimum of eight initialization cycles (any combination of cycles contain- ing a ras signal). during power-on, it is recommended that ras track with v dd or be held at a valid v ih to avoid current surges.
is41lv16100b integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 5 rev. b 04/13/05 issi ? absolute maximum ratings (1) symbol par ameters rating unit v t voltage on any pin relative to gnd 3.3v ?0.5 to +4.6 v v dd supply voltage 3.3v ?0.5 to +4.6 v i out output current 50 ma p d power dissipation 1 w t a commercial operation temperature 0 to +70 c industrial operation temperature -40 to +85 c t stg storage temperature ?55 to +125 c note: 1. stress greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended operating conditions (voltages are referenced to gnd.) symbol parameter min. typ. max. unit v dd supply voltage 3.3v 3.0 3.3 3.6 v v ih input high voltage 3.3v 2.0 ? v dd + 0.3 v v il input low voltage 3.3v ?0.3 ? 0.8 v t a commercial ambient temperature 0 ? 70 c industrial ambient temperature ?40 ? 85 c capacitance (1,2) symbol parameter max. unit c in 1 input capacitance: a0-a9 5 pf c in 2 input capacitance: ras , ucas , lcas , we , oe 7pf c io data input/output capacitance: i/o0-i/o15 7 pf notes: 1. tested initially and after any design or process changes that may affect these parameters. 2. test conditions: t a = 25c, f = 1 mhz.
is41lv16100b 6 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. b 04/13/05 issi ? electrical characteristics (1) (recommended operating conditions unless otherwise noted.) symbol parameter test condition speed min. max. unit i il input leakage current any input 0v v in v dd ?10 10 a other inputs not under test = 0v i io output leakage current output is disabled (hi-z) ?10 10 a 0v v out v dd v oh output high voltage level i oh = ?2.0 ma (3.3v) 2.4 ? v v ol output low voltage level i ol = 2.0 ma (3.3v) ? 0.4 v i cc 1 standby current: ttl ras , lcas , ucas v ih commercial 3.3v ? 3 ma industrial 3.3v ? 4 ma i cc 2 standby current: cmos ras , lcas , ucas v dd ? 0.2v 3.3v ? 2 ma i cc 3 operating current: ras , lcas , ucas , -50 ? 180 ma random read/write (2,3,4) address cycling, t rc = t rc (min.) -60 ? 170 average power supply current i cc 4 operating current: ras = v il , lcas , ucas , -50 ? 180 ma edo page mode (2,3,4) cycling t pc = t pc (min.) -60 ? 170 average power supply current i cc 5 refresh current: ras cycling, lcas , ucas v ih -50 ? 180 ma ras -only (2,3) t rc = t rc (min.) -60 ? 170 average power supply current i cc 6 refresh current: ras , lcas , ucas cycling -50 ? 180 ma cbr (2,3,5) t rc = t rc (min.) -60 ? 170 average power supply current notes: 1. an initial pause of 200 s is required after power-up followed by eight ras refresh cycles ( ras -only or cbr) before proper device operation is assured. the eight ras cycles wake-up should be repeated any time the t ref refresh requirement is exceeded. 2. dependent on cycle rates. 3. specified values are obtained with minimum cycle time and the output open. 4. column-address is changed once each edo page cycle. 5. enables on-chip refresh and address counters.
is41lv16100b integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 7 rev. b 04/13/05 issi ? ac characteristics (1,2,3,4,5,6) (recommended operating conditions unless otherwise noted.) -50 -60 symbol parameter min. max. min. max. units t rc random read or write cycle time 85 ? 110 ? ns t rac access time from ras (6, 7) ?50 ?60 ns t cac access time from cas (6, 8, 15) ?14 ?15 ns t aa access time from column-address (6) ?25 ?30 ns t ras ras pulse width 50 10k 60 10k ns t rp ras precharge time 30 ? 40 ? ns t cas cas pulse width (26) 8 10k 10 10k ns t cp cas precharge time (9, 25) 9? 10? ns t csh cas hold time (21) 50 ? 60 ? ns t rcd ras to cas delay time (10, 20) 12 37 20 45 ns t asr row-address setup time 0 ? 0 ? ns t rah row-address hold time 8 ? 10 ? ns t asc column-address setup time (20) 0? 0? ns t cah column-address hold time (20) 8? 10? ns t ar column-address hold time 30 ? 40 ? ns (referenced to ras ) t rad ras to column-address delay time (11) 14 25 15 30 ns t ral column-address to ras lead time 25 ? 30 ? ns t rpc ras to cas precharge time 5 ? 5 ? ns t rsh ras hold time (27) 14 ? 15 ? ns t clz cas to output in low-z (15, 29) 0? 0? ns t crp cas to ras precharge time (21) 5? 5? ns t od output disable time (19, 28, 29) 312 312 ns t oe /t oea output enable time (15, 16) ?14 ?15 ns t oehc oe high hold time from cas high 15 ? 15 ? ns t oep oe high pulse width 10 ? 10 ? ns t oes oe low to cas high setup time 5 ? 5 ? ns t rcs read command setup time (17, 20) 0? 0? ns t rrh read command hold time 0 ? 0 ? ns (referenced to ras ) (12) t rch read command hold time 0 ? 0 ? ns (referenced to cas ) (12, 17, 21) t wch write command hold time (17, 27) 8? 10? ns t wcr write command hold time 40 ? 50 ? ns (referenced to ras ) (17)
is41lv16100b 8 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. b 04/13/05 issi ? ac characteristics (continued) (1,2,3,4,5,6) (recommended operating conditions unless otherwise noted.) -50 -60 symbol parameter min. max. min. max. units t wp write command pulse width (17) 8? 10? ns t wpz we pulse widths to disable outputs 10 ? 10 ? ns t rwl write command to ras lead time (17) 13 ? 15 ? ns t cwl write command to cas lead time (17, 21) 8? 15? ns t wcs write command setup time (14, 17, 20) 0? 0? ns t dhr data-in hold time (referenced to ras )39?40?ns t oeh oe hold time from we during 14 ? 15 ? ns read-modify-write cycle (18) t ds data-in setup time (15, 22) 0? 0? ns t dh data-in hold time (15, 22) 8? 15? ns t rwc read-modify-write cycle time 110 ? 155 ? ns t rwd ras to we delay time during 65 ? 85 ? ns read-modify-write cycle (14) t cwd cas to we delay time (14, 20) 26 ? 40 ? ns t awd column-address to we delay time (14) 40 ? 55 ? ns t pc edo page mode read or write 30 ? 40 ? ns cycle time (24) t rasp ras pulse width in edo page mode 50 100k 60 100k ns t cpa access time from cas precharge (15) ?30 ?35 ns t prwc edo page mode read-write 56 ? 56 ? ns cycle time (24) t coh data output hold after cas low 5? 5? ns t off output buffer turn-off delay from 3 12 3 15 ns cas or ras (13,15,19, 29) t whz output disable delay from we 310 315 ns t clch last cas going low to first cas 10 ? 10 ? ns returning high (23) t csr cas setup time (cbr refresh) (30, 20) 5? 5? ns t chr cas hold time (cbr refresh) (30, 21) 8? 10? ns t ord oe setup time prior to ras during 0 ? 0 ? ns hidden refresh cycle t ref auto refresh period (1,024 cycles) ? 16 ? 16 ms t t transition time (rise or fall) (2, 3) 350 350 ns
is41lv16100b integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 9 rev. b 04/13/05 issi ? notes: 1. an initial pause of 200 s is required after power-up followed by eight ras refresh cycle ( ras -only or cbr) before proper device operation is assured. the eight ras cycles wake-up should be repeated any time the t ref refresh requirement is exceeded. 2. v ih (min) and v il (max) are reference levels for measuring timing of input signals. transition times, are measured between v ih and v il (or between v il and v ih ) and assume to be 1 ns for all inputs. 3. in addition to meeting the transition rate specification, all input signals must transit between v ih and v il (or between v il and v ih ) in a monotonic manner. 4. if cas and ras = v ih , data output is high-z. 5. if cas = v il , data output may contain data from the last valid read cycle. 6. measured with a load equivalent to one ttl gate and 50 pf. 7. assumes that t rcd t rcd (max). if t rcd is greater than the maximum recommended value shown in this table, t rac will increase by the amount that t rcd exceeds the value shown. 8. assumes that t rcd t rcd (max). 9. if cas is low at the falling edge of ras , data out will be maintained from the previous cycle. to initiate a new cycle and clear the data output buffer, cas and ras must be pulsed for t cp . 10. operation with the t rcd (max) limit ensures that t rac (max) can be met. t rcd (max) is specified as a reference point only; if t rcd is greater than the specified t rcd (max) limit, access time is controlled exclusively by t cac . 11. operation within the t rad (max) limit ensures that t rcd (max) can be met. t rad (max) is specified as a reference point only; if t rad is greater than the specified t rad (max) limit, access time is controlled exclusively by t aa . 12. either t rch or t rrh must be satisfied for a read cycle. 13. t off (max) defines the time at which the output achieves the open circuit condition; it is not a reference to v oh or v ol . 14. t wcs , t rwd , t awd and t cwd are restrictive operating parameters in late write and read-modify-write cycle only. if t wcs t wcs (min), the cycle is an early write cycle and the data output will remain open circuit throughout the entire cycle. if t rwd t rwd (min), t awd t awd (min) and t cwd t cwd (min), the cycle is a read-write cycle and the data output will contain data read from the selected cell. if neither of the above conditions is met, the state of i/o (at access time and until cas and ras or oe go back to v ih ) is indeterminate. oe held high and we taken low after cas goes low result in a late write ( oe -controlled) cycle. 15. output parameter (i/o) is referenced to corresponding cas input, i/o0-i/o7 by lcas and i/o8-i/o15 by ucas . 16. during a read cycle, if oe is low then taken high before cas goes high, i/o goes open. if oe is tied permanently low, a late write or read-modify-write is not possible. 17. write command is defined as we going low. 18. late write and read-modify-write cycles must have both t od and t oeh met ( oe high during write cycle) in order to ensure that the output buffers will be open during the write cycle. the i/os will provide the previously written data if cas remains low and oe is taken back to low after t oeh is met. 19. the i/os are in open during read cycles once t od or t off occur. 20. the first cas edge to transition low. 21. the last cas edge to transition high. 22. these parameters are referenced to cas leading edge in early write cycles and we leading edge in late write or read- modify-write cycles. 23. last falling cas edge to first rising cas edge. 24. last rising cas edge to next cycle?s last rising cas edge. 25. last rising cas edge to first falling cas edge. 26. each cas must meet minimum pulse width. 27. last cas to go low. 28. i/os controlled, regardless ucas and lcas . 29. the 3 ns minimum is a parameter guaranteed by design. 30. enables on-chip refresh and address counters. ac test conditions output load: one ttl load and 50 pf (v dd = 3.3v 10%) input timing reference levels: v ih = 2.0v, v il = 0.8v (v dd = 3.3v 10%) output timing reference levels: v oh = 2.0v, v ol = 0.8v
is41lv16100b 10 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. b 04/13/05 issi ? read cycle note: 1. t off is referenced from rising edge of ras or cas , whichever occurs last. t ras t rc t rp t ar t cah t asc t rad t ral oe i/o we address ucas / lcas ras row column row open open valid data t csh t cas t rsh t crp t clch t rcd t rah t asr t rrh t rch t rcs t aa t cac t off (1) t rac t clc t oes t oe t od don?t care undefined
is41lv16100b integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 11 rev. b 04/13/05 issi ? early write cycle ( oe = don't care) t ras t rc t rp t ar t cah t asc t rad t ral t ach i/o we address ucas / lcas ras row column row t csh t cas t rsh t crp t clch t rcd t rah t asr t cwl t wcr t wch t rwl t wp t wcs t dh t ds t dhr valid data don?t care
is41lv16100b 12 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. b 04/13/05 issi ? read write cycle (late write and read-modify-write cycles) t ras t rwc t rp t ar t cah t asc t rad t ral t ach we oe address ucas / lcas ras row column row t csh t cas t rsh t crp t clch t rcd t rah t asr t rwd t cwl t cwd t rwl t awd t wp t rcs t cac t clz t ds t dh t oeh t od t oe t rac t aa i/o open open valid d out valid d in don?t care undefined
is41lv16100b integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 13 rev. b 04/13/05 issi ? edo-page-mode read cycle note: 1. t pc can be measured from falling edge of cas to falling edge of cas , or from rising edge of cas to rising edge of cas . both measurements must meet the t pc specifications. t rasp t rp address ucas / lcas ras row row t cas, t clch t crp t rcd t csh t cp t cas, t clch t cah t cas, t clch t ral t rsh t cp t cp t pc (1) t asr t rah t rad t ar column column t cah t cah column t asc t asc oe i/o we open ope n valid data t aa t aa t cpa t cac t cac t rac t coh t clz t oep t oe t oes t oes t od t oe t oehc valid data t rch t rrh t aa t cpa t cac t off t clz valid data t od t asc t rcs don?t care undefined
is41lv16100b 14 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. b 04/13/05 issi ? edo-page-mode early-write cycle t rasp t rp address ucas / lcas ras row row t cas, t clch t crp t rcd t csh t cp t cas, t clch t cah t cas, t clch t ral t rsh t cp t cp t pc t asr t rah t rad t ar t ach column column t ach t ach t cah t cah column t asc t asc oe i/o we valid data t asc t wcs t wch t cwl t wp t rhcp t wcs t wch t cwl t wp t ds t dh t dhr t wcr t wcs t wch t cwl t wp valid data t ds t dh valid data t ds t rwl t dh don?t care
is41lv16100b integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 15 rev. b 04/13/05 issi ? edo-page-mode read-write cycle (late write and read-modify write cycles) note: 1. t pc can be measured from falling edge of cas to falling edge of cas , or from rising edge of cas to rising edge of cas . both measurements must meet the t pc specifications. don?t care undefined t rasp t rp address ucas / lcas ras row row t crp t rcd t csh t cp t cah t cas, t clch t ral t rsh t cp t cp t rah t rad t ar t asr column column t cah t cah column t asc t asc t cas, t clch t cas, t clch oe i/o we t asc t rwd t rcs t cwl t wp t awd t cwd t dh t ds t cac t clz t awd t cwd t cwl t wp t awd t cwd t cwl t rwl t wp open open d in d out t oe t oe t oe t od t oeh t od t od t dh t ds t cpa t aa t cac t clz d in d out t dh t ds t cac t clz d in d out t cpa t aa t rac t aa t pc / t prwc (1)
is41lv16100b 16 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. b 04/13/05 issi ? edo-page-mode read-early-write cycle (pseudo read-modify write) t rasp t rp address ucas / lcas ras row row t crp t rcd t pc t csh t cp t cah t cas t ral t rsh t cp t cp t ach t rah t rad t ar t asr column (a) column (n) t cah t cah column (b) t asc t asc t cas t cas oe i/o we t asc t cac t rch t dh open open valid data (a) t oe t wcs t cac t coh d in t cpa t wch t rac t aa t pc valid data (b) t whz t ds t rcs t aa don?t care
is41lv16100b integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 17 rev. b 04/13/05 issi ? ac waveforms read cycle (with we -controlled disable) ras ras ras ras ras -only refresh cycle ( oe , we = don't care) t ar t cah t asc t asc t rad oe i/o we address ucas / lcas ras row column open open valid data t csh t cas t crp t rcd t cp t rah t asr t rch t rcs t rcs t aa t cac t whz t rac t clz t clz t oe t od column t ras t rc t rp i/o address ucas / lcas ras row row open t crp t rah t asr t rpc don?t care undefined don?t care
is41lv16100b 18 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. b 04/13/05 issi ? hidden refresh cycle (1) ( we = high; oe = low) cbr cbr cbr cbr cbr refresh cycle (addresses; we , oe = don't care) notes: 1. a hidden refresh may also be performed after a write cycle. in this case, we = low and oe = high. 2. t off is referenced from rising edge of ras or cas , whichever occurs last. t ras t ras t rp t rp i/o ucas / lcas ras open t cp t rpc t csr t chr t rpc t csr t chr t ras t ras t rp ucas / lcas ras t crp t rcd t rsh t chr t ar t asc t rad address row column t rah t asr t ral t cah i/o open open valid data t aa t cac t rac t clz t off (2) oe t oe t ord t od don?t care undefined
is41lv16100b integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 19 rev. b 04/13/05 issi ? ordering information : 3.3v commercial range: 0 c to +70 c speed (ns) order part no. package 50 is41lv16100b-50k 400-mil soj is41lv16100b-50kl 400-mil soj, lead-free is41lv16100b-50t 400-mil tsop (type ii) is41lv16100b-50tl 400-mil tsop (type ii), lead-free 60 is41lv16100b-60k 400-mil soj is41lv16100b-60kl 400-mil soj, lead-free is41lv16100b-60t 400-mil tsop (type ii) is41lv16100b-60tl 400-mil tsop (type ii), lead-free industrial range: -40 c to +85 c speed (ns) order part no. package 50 is41lv16100b-50ki 400-mil soj is41lv16100b-50kli 400-mil soj, lead-free is41lv16100b-50ti 400-mil tsop (type ii) is41lv16100b-50tli 400-mil tsop (type ii), lead-free 60 is41lv16100b-60ki 400-mil soj is41LV16100B-60KLI 400-mil soj, lead-free is41lv16100b-60ti 400-mil tsop (type ii) is41lv16100b-60tli 400-mil tsop (type ii), lead-free
packaging information issi ? integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. f 10/29/03 copyright ? 2003 integrated silicon solution, inc. all rights reserved. issi reserves the right to make changes to this speci fication and its products at any time without notice. issi assumes no liability arising out of the application or use of any information, products or services desc ribed herein. customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders fo r products. 400-mil plastic soj package code: k notes: 1. controlling dimension: millimeters. 2. bsc = basic lead spacing between centers. 3. dimensions d and e1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. reference document: jedec ms-027. seating plane 1 n e1 d e2 e b e a1 a c a2 b n/2+1 n/2 millimeters inches millimeters inches millimeters inches symbol min max min max min max min max min max min max no. leads (n) 28 32 36 a 3.25 3.75 0.128 0.148 3.25 3.75 0.128 0.148 3.25 3.75 0.128 0.148 a1 0.64 ? 0.025 ? 0.64 ? 0.025 ? 0.64 ? 0.025 ? a2 2.08 ? 0.082 ? 2.08 ? 0.082 ? 2.08 ? 0.082 ? b 0.38 0.51 0.015 0.020 0.38 0.51 0.015 0.020 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 0.66 0.81 0.026 0.032 0.66 0.81 0.026 0.032 c 0.18 0.33 0.007 0.013 0.18 0.33 0.007 0.013 0.18 0.33 0.007 0.013 d 18.29 18.54 0.720 0.730 20.82 21.08 0.820 0.830 23.37 23.62 0.920 0.930 e 11.05 11.30 0.435 0.445 1 1.05 11.30 0.435 0.445 11.05 11.30 0.435 0.445 e1 10.03 10.29 0.395 0.405 10.03 10.29 0.395 0.405 10.03 10.29 0.395 0.405 e2 9.40 bsc 0.370 bsc 9.40 bsc 0.370 bsc 9.40 bsc 0.370 bsc e 1.27 bsc 0.050 bsc 1.27 bsc 0.050 bsc 1.27 bsc 0.050 bsc
packaging information issi ? copyright ? 2003 integrated silicon solution, inc. all rights reserved. issi reserves the right to make changes to this speci fication and its products at any time without notice. issi assumes no liability arising out of the application or use of any information, products or services desc ribed herein. customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders fo r products. 2 integrated silicon solution, inc. ? www.issi.com ? 1-800-379-4774 rev. f 10/29/03 millimeters inches millimeters inches millimeters inches symbol min max min max min max min max min max min max no. leads (n) 40 42 44 a 3.25 3.75 0.128 0.148 3.25 3.75 0.128 0.148 3.25 3.75 0.128 0.148 a1 0.64 ? 0.025 ? 0.64 ? 0.025 ? 0.64 ? 0.025 ? a2 2.08 ? 0.082 ? 2.08 ? 0.082 ? 2.08 ? 0.082 ? b 0.38 0.51 0.015 0.020 0.38 0.51 0.015 0.020 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 0.66 0.81 0.026 0.032 0.66 0.81 0.026 0.032 c 0.18 0.33 0.007 0.013 0.18 0.33 0.007 0.013 0.18 0.33 0.007 0.013 d 25.91 26.16 1.020 1.030 27.18 27.43 1.070 1.080 28.45 28.70 1.120 1.130 e 11.05 11.30 0.435 0.445 11.05 11.30 0.435 0.445 11.05 11.30 0.435 0.445 e1 10.03 10.29 0.395 0.405 10.03 10.29 0.395 0.405 10.03 10.29 0.395 0.405 e2 9.40 bsc 0.370 bsc 9.40 bsc 0.370 bsc 9.40 bsc 0.370 bsc e 1.27 bsc 0.050 bsc 1.27 bsc 0.050 bsc 1.27 bsc 0.050 bsc
integrated silicon solution, inc. packaging information plastic tsop package code: t (type ii) plastic tsop (t - type ii) (ms 25) millimeters inches symbol min max min max ref. std. n 24/26 a 1.20 0.0472 a1 0.05 0.15 0.002 0.0059 b 0.30 0.51 0.012 0.0201 c 0.12 0.21 0.005 0.0083 d 17.01 17.27 0.670 0.6899 e 1 7.49 7.75 0.295 0.3051 e 1.27 bsc 0.050 bsc e 9.02 9.42 0.462 0.4701 l 0.40 0.60 0.016 0.0236 a 0 5 0 5 pk13197t40 rev. c 08/013/99 plastic tsop (t - type ii) (ms 24) millimeters inches symbol min max min max ref. std. n 40/44 a 1.20 0.0472 a1 0.05 0.15 0.002 0.0059 b 0.30 0.45 0.012 0.0157 c 0.12 0.21 0.005 0.0083 d 18.31 18.51 0.721 0.7287 e 1 10.06 10.26 0.396 0.4040 e 0.80 bsc 0.031 bsc e 11.56 11.96 0.455 0.4709 l 0.40 0.60 0.016 0.0236 a 0 8 0 8 plastic tsop (t - type ii) (ms 24) millimeters inches symbol min max min max ref. std. n 44/50 a 1.20 0.0472 a1 0.05 0.15 0.002 0.0059 b 0.30 0.45 0.012 0.0157 c 0.12 0.21 0.005 0.0083 d 20.85 21.05 0.821 0.8287 e 1 10.06 10.26 0.396 0.4040 e 0.80 bsc 0.031 bsc e 11.56 11.96 0.455 0.4709 l 0.40 0.60 0.016 0.0236 a 0 8 0 8 issi ? notes: 1. controlling dimension: millimeters, unless otherwise specified. 2. bsc = basic lead spacing between centers. 3. dimensions d1 and e do not include mold flash protru- sions and should be measured from the bottom of the package . 4. formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. d seating plane b e c 1 n/2 n/2+1 n e1 a1 a e l a

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